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Researchers at MIT have invented a transistor using magnetic materials instead of silicon, promising smaller, faster, and more energy-efficient electronic circuits.

Scientists from the University of Ottawa and MIT review more than 20 years of research and identify pathways to room-temperature devices that could make electronics faster and more energy efficient.

Researchers at TU Wien create a silicon-germanium transistor by doping the oxide layer, leading to smaller, faster devices that save energy and suit quantum chips.

Engineers have found ways to layer high-quality semiconductor layers directly on top of each other to build 3D chips.

Researchers use a precise helium ion beam to introduce controlled defects into aluminum nitride, turning it into a ferroelectric material for low-power data storage with existing chip manufacturing tools.

A layered material transforms under pressure, offering energy-efficient, fast data storage for future computers.