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A two-dimensional bismuth–indium selenide device switches below 60 millivolts per decade at room temperature and needs only 160 millivolts of gate swing.

A silicon photonic chip device corrects distortions directly in light to enable faster and lower power connections between data centers for large artificial intelligence networks.

Radiation-resistant graphene nanoribbon sensors survive fusion-level gamma exposure, opening new pathways for space and nuclear instrumentation.

KAIST researchers build an oscillatory Ising machine using standard silicon transistors, enabling fast solutions to hard industrial problems at room temperature.

Researchers demonstrate a fourfold increase in heat transfer using engineered gold patterns across tiny gaps, with potential uses in electronics cooling and energy conversion systems.

Tesla and SpaceX plan a major facility to produce advanced chips for AI, robotics, and space computing to meet growing internal demand.

A combination of packaging, connection and cooling techniques designed to pack chips more tightly while improving data speed and heat control for future AI systems.

Chinese scientists achieve electrical control of exchange bias below 10 nanometers—a breakthrough that could revolutionize data storage and spintronic devices.