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Chinese scientists achieve electrical control of exchange bias below 10 nanometers—a breakthrough that could revolutionize data storage and spintronic devices.

Researchers combine standard semiconductor processes with nanoscale forces so fragile molecular layers form working electronic devices at scale and high reliability.

A predictive framework combines energy preferences with atom movement rates to forecast complete reaction sequences and guide better synthesis recipes for useful compounds.

This breakthrough in two-dimensional layers could lead to better data storage technologies and new insights into how magnets work at tiny scales.

The advance uses a new three-dimensional transistor structure to raise computing performance and reduce energy use in future electronic systems.

Scientists create adaptable tiny devices using ruthenium molecules that can switch functions for better AI hardware, blending chemistry with brain-inspired technology for efficient information processing.

A cryogenic neuromorphic platform using silicon carbide transistors mimics neuron spikes at millikelvin temperatures and supports scalable quantum control plus deep-space use.

Researchers have discovered a specific method to predict which layered materials can be successfully turned into thin sheets for use in flexible and printable electronic devices.